10 Активные компоненты

MOSFET-N Dual: 60V, (4,5A, 2W)

MOS-P-FET-e (200V, 6,5A, 74W, <0,8Ω(3,9A)

MOS-P-FET-e (30V, 9A, 2,5W, <0,02Ω)

JFET-N (40V, 50mA)

N-MOSFET  55V, 89A, 170W, <10mΩ

N-MOSFET  60V, 50A, 190W, <18mΩ

N-MOSFET  60V, 55A, 150W, <16mΩ

N-MOSFET  75V, 80A, 140W, <9mΩ

N-MOSFET  30V, 16А, 2,5W

N-MOSFET 100V, 28(33)A, 150W, <77mΩ

N-MOSFET 100V, 9,7А, 0.20Ω, 48W

N-MOSFET  55V, 110A, 200W, <8mΩ(59A)

N-MOSFET  75V, 71A, 150W, <13mΩ(43A)

N-MOSFET  60V, 84A, 140W, <8mΩ

N-MOSFET 500V, 10A, 35W

MOS-N-FET+D (Dual-Gate, UHF, 12V, Idss>2mA, Up<2,5V)

N-MOSFET  40V, 57A, 50W, <0,08Ω

N-MOSFET 600V,  9A, 50W, <1,2Ω(4,5A)

N-MOSFET  60V,  0,3A, 0,83W, <5Ω

N-MOSFET  STP75NF75: 75V, 80A, 150W,  <0,011Ω
CMP75NF75: 80V, 100A, 180W,  <0,007Ω

N-MOSFET 100V, 40A, 150W, <0,033Ω

N-MOSFET 650V, 24A, 240W, <0,16Ω

N-MOSFET 600V, 20A, 50W, <0,19Ω

N-MOSFET 800V, 10A, 240W, <1,1Ω

N-MOSFET 600V,  3A, 75W, <2,5Ω(1,5A)

MOS-N-IGBT (650V, 100A, 428W, 110ns)
VCE(sat) = 1.85V @ IC = 60A
Eoff = 0.53mJ @ TC = 25°C
High Input Impedance
trr = 110ns (typ.) @diF/dt = 500A/ μs

MOS-N-IGBT (HighSpeed 30kHz, 600V, 41/30A, 250W, 10us, 30kHz)

MOS-N-IGBT (600V, 35A)

MOS-N-IGBT (360V, 35A)

Ignition IGBT 400V, 20A, Uкэ.нас: 1,3 В